公开(公告)号：US20220319833A1

公开(公告)日：2022-10-06

申请号：US17711998

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Tomomi Takayama ,  Che Chen Hsu

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.