公开(公告)号：US20220319833A1

公开(公告)日：2022-10-06

申请号：US17711998

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Tomomi Takayama ,  Che Chen Hsu

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.

公开(公告)号：US10381219B1

公开(公告)日：2019-08-13

申请号：US16171098

申请日：2018-10-25

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  Tomomi Takayama ,  Taishi Ebisudani ,  Toshiya Suzuki ,  Tomohiro Kubota

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455

Abstract: Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.