公开(公告)号：US10797133B2

公开(公告)日：2020-10-06

申请号：US16014981

申请日：2018-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US11296189B2

公开(公告)日：2022-04-05

申请号：US17009093

申请日：2020-09-01

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20190393308A1

公开(公告)日：2019-12-26

申请号：US16014981

申请日：2018-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.