公开(公告)号：US20240071766A2

公开(公告)日：2024-02-29

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar ,  Ashwin Agathya Boochakravarthy ,  Wei Li

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28088 ,  H01L29/4236 ,  H01L29/4966

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

公开(公告)号：US20230238239A2

公开(公告)日：2023-07-27

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L21/28088 ,  H01L29/4966 ,  H01L29/4236

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

公开(公告)号：US11996292B2

公开(公告)日：2024-05-28

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar ,  Ashwin Agathya Boochakravathy ,  Wei Li

IPC: H01L21/768 ,  H01L21/28 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L25/065 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28088 ,  H01L29/4236 ,  H01L29/4966

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

公开(公告)号：US20210125832A1

公开(公告)日：2021-04-29

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.