公开(公告)号：US10354844B2

公开(公告)日：2019-07-16

申请号：US15594445

申请日：2017-05-12

Applicant: ASM IP HOLDING B.V.

Inventor： Hiroshi Kondo ,  Masaki Hirayama

IPC: H01J37/32

Abstract: An insulator for a processing apparatus including an upper electrode, a lower electrode and a reaction chamber, the insulator being adapted to be arranged around the upper electrode and the insulator including: a bottom end adapted to face the reaction chamber; and a side wall facing a side wall of the upper electrode, wherein an edge portion of the bottom end of the insulator extends radially inwardly to form a projecting portion such that the projecting portion covers an edge of a bottom surface of the upper electrode and a clearance between the side wall of the upper electrode and the side wall of the insulator.

公开(公告)号：US11118262B2

公开(公告)日：2021-09-14

申请号：US16157303

申请日：2018-10-11

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Masaki Hirayama

IPC: C23C16/455 ,  B01F5/02 ,  H01J37/32 ,  B01F3/02 ,  C23C16/50 ,  B01F5/00 ,  B01F15/00

Abstract: A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.