公开(公告)号：US20250109978A1

公开(公告)日：2025-04-03

申请号：US18898765

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Salam Harb

IPC: G01G3/13 ,  G01B7/06

Abstract: Weight and/or layer thickness measurement systems include: (a) a support base for supporting an object; (b) an oscillator source applying oscillating frequency to the support base; (c) a strain sensor measuring strain induced in the support base by the oscillation; and (d) a phase locked loop module connected to the oscillator source and strain sensor. The oscillating frequency applied to the support base is modified based on phase difference information determined by the phase locked loop module to locate a resonant frequency for the support base and supported object. The resonant frequencies before and after processing are used to determine weight and/or thickness of a layer on the object. Cluster type substrate processing systems may include weight and/or layer thickness measurement systems, e.g., of these types, within a substrate handling chamber and/or in a separate chamber or station engaged with the substrate handling chamber.

公开(公告)号：US20250038012A1

公开(公告)日：2025-01-30

申请号：US18783113

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Samer Banna ,  Mandar Deshpande ,  Salam Harb

IPC: H01L21/67 ,  C23C16/02 ,  C23C16/458 ,  C23C16/56

Abstract: Substrate processing systems and methods include sealing a gate valve connecting a first chamber (e.g., a load-lock module) and a second chamber (e.g., an equipment front end module), wherein a first side of the first chamber connects to layer deposition equipment and a second side of the first chamber connects to the second chamber via the gate valve. The second chamber receives (i) incoming substrates to be supplied to the first chamber and (ii) outgoing substrates to be removed from the first chamber. In use, a processed substrate is moved from the layer deposition equipment into the first chamber. This processed substrate is cooled by transferring inert gas from the second chamber into the first chamber and into contact with the processed substrate, thereby transferring heat from the processed substrate to the inert gas. After passing over the processed substrate, the inert gas is exhausted from the first chamber.