公开(公告)号：US20250122617A1

公开(公告)日：2025-04-17

申请号：US18913070

申请日：2024-10-11

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun ,  SeongMin Han

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/515

Abstract: Provided is a method of forming a conformal film on a recess of a substrate in a reaction chamber by repeating a cycle comprising forming a first film comprising supplying a silicon source and a reactant and applying a first power from a power supply unit to the reaction chamber while supplying the silicon source and the reactant, treating the first film by applying a second power from the power supply unit to the reaction chamber while supplying the reactant, wherein the first power is applied in a pulsed mode, wherein the power supply unit comprises a matching network comprising electronically variable capacitors.