公开(公告)号：US20240254619A1

公开(公告)日：2024-08-01

申请号：US18199058

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun

IPC: C23C16/04 ,  C23C16/40

CPC classification number: C23C16/045 ,  C23C16/402

Abstract: Provided is a substrate processing method for filling a gap structure without changing thin-film properties and without generating voids and pores, and the substrate processing method includes a first operation of forming a deposition inhibiting region on a structure including a gap by supplying a deposition inhibiting gas on the structure, a second operation of forming a thin film on the gap structure, and a third operation of removing the deposition inhibiting gas in the deposition inhibiting region by using at least one of gases used during the forming of the thin film.

公开(公告)号：US20230089397A1

公开(公告)日：2023-03-23

申请号：US17942318

申请日：2022-09-12

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun

IPC: H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  C23C14/48

Abstract: An air gap forming method of forming an air gap in a gap structure having an upper surface, a lower surface, and a sidewall connecting the upper and lower surface, includes: repeatedly performing a selective deposition cycle, wherein the selective deposition cycle includes supplying a deposition inhibitor onto a substrate including the gap structure; and selectively forming a material layer on the upper surface compared to the sidewall.

公开(公告)号：US20230298930A1

公开(公告)日：2023-09-21

申请号：US18122364

申请日：2023-03-16

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun ,  ChangWan Lee

IPC: H01L21/762 ,  H01J37/32 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/76224 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/4554 ,  H01J2237/332 ,  H01J37/32834 ,  H01J37/32082

Abstract: Disclosed is a method of processing a substrate, including: providing the substrate into a reaction space, the substrate comprising a gap having a predetermined cross-sectional area and a depth, performing a first sub-cycle step for depositing a gap-filling material by a predetermined thickness along a surface of the gap by an atomic layer deposition method, performing a second sub-cycle step for forming a deposition inhibiting region in an upper region of the gap using a deposition inhibitor and repeating a super-cycle such that a cross-sectional area of an inlet region of the gap remains greater than that of a lower region thereof located below the inlet region, the super-cycle comprising at least one the first sub-cycle and at least one the second sub-cycle, wherein the gap is filled without an occurrence of a void in the gap. Further, a substrate processing method for controlling a position of the void in the gap using the disclosed method above is disclosed.