Semiconductor processing apparatus and a method for processing a substrate

    公开(公告)号:US11473195B2

    公开(公告)日:2022-10-18

    申请号:US15909705

    申请日:2018-03-01

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

    SEMICONDUCTOR PROCESSING APPARATUS AND A METHOD FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20230017569A1

    公开(公告)日:2023-01-19

    申请号:US17947230

    申请日:2022-09-19

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

    SEMICONDUCTOR PROCESSING APPARATUS AND A METHOD FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20190271078A1

    公开(公告)日:2019-09-05

    申请号:US15909705

    申请日:2018-03-01

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

Patent Agency Ranking