公开(公告)号：US20180127873A1

公开(公告)日：2018-05-10

申请号：US15569707

申请日：2016-05-24

Applicant: ASM IP Holding B.V.

Inventor： Tiina Sarnet ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/30 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.