公开(公告)号：US11549177B2

公开(公告)日：2023-01-10

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US20200181769A1

公开(公告)日：2020-06-11

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/36

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US08956939B2

公开(公告)日：2015-02-17

申请号：US13872932

申请日：2013-04-29

Applicant: ASM International N.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括形成第一电极，通过热原子层沉积（ALD）形成包括金属氧化物的电阻式切换氧化物层，并通过热原子层沉积（ALD）形成第二电极，其中电阻式开关层介于第一 电极和第二电极。 可以在沉积金属氧化物之后，进行电阻式开关氧化物的形成而不使开关氧化物层的表面暴露于表面改性等离子体处理。