公开(公告)号：US20250155824A1

公开(公告)日：2025-05-15

申请号：US19025718

申请日：2025-01-16

Applicant: ASML NETHERLAND B.V.

Inventor： Jingjing LIU ,  Duan-Fu Stephen HSU ,  Xingyue PENG

IPC: G03F7/00 ,  G05B19/4099

Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.