公开(公告)号：US11137690B2

公开(公告)日：2021-10-05

申请号：US16649699

申请日：2018-10-05

Applicant: ASML NETHERLANDS B. V.

Inventor： Duan-Fu Stephen Hsu

IPC: G03B27/54 ,  G03F7/20 ,  G03F1/24

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US11747739B2

公开(公告)日：2023-09-05

申请号：US17434802

申请日：2020-02-10

Applicant: ASML Netherlands B. V. ,  Cymer, LLC

Inventor： Willard Earl Conley ,  Joshua Jon Thornes ,  Duan-Fu Stephen Hsu

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70575 ,  G03F7/705

Abstract: Systems, methods, and computer programs for increasing a contrast for a lithography system are disclosed. In one aspect, a method of optimizing a process for imaging a feature on a substrate using a photolithography system is disclosed, the method including obtaining an optical spectrum of a light beam for the imaging, wherein the light beam includes pulses having a plurality of different wavelengths, and narrowing the optical spectrum of the pulses of the light beam for the imaging to improve a quality metric of the imaging.