公开(公告)号：US20200159128A1

公开(公告)日：2020-05-21

申请号：US16630886

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V

Inventor： Victor Emanuel CALADO ,  Richard Johannes Franciscus VAN HAREN ,  Jerome Yann Remi DEPRE ,  Clément André Auguste MASSACRIER

IPC: G03F7/20 ,  G03F7/16 ,  H01L23/544 ,  B24B37/005 ,  H01L21/67 ,  H01L21/306 ,  H01L21/66 ,  G01N21/84 ,  G03F7/00 ,  G01N21/47

Abstract: A device manufacturing method includes: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer-forming process on a different substrate according to the controlled layer-forming parameter.