公开(公告)号：US20190129299A1

公开(公告)日：2019-05-02

申请号：US16093537

申请日：2017-04-12

申请人： ASML NETHERLANDS B.V.

发明人： Maxim Aleksandrovich NASALEVICH ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsber RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVICOV

IPC分类号： G03F1/62 ,  G03F7/20 ,  G02B5/28

摘要： Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US20240004283A1

公开(公告)日：2024-01-04

申请号：US18227833

申请日：2023-07-28

申请人： ASML NETHERLANDS B.V.

发明人： Maxim Aleksandrovich Nasalevich ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsbert RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVKOV

IPC分类号： G03F1/62 ,  G03F7/00 ,  G03F1/82 ,  G02B5/20 ,  G02B5/28

CPC分类号： G03F1/62 ,  G03F7/70191 ,  G03F7/70983 ,  G03F1/82 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70575 ,  G02B5/208 ,  G02B5/283

摘要： Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US20220082943A1

公开(公告)日：2022-03-17

申请号：US17419360

申请日：2019-12-12

申请人： ASML NETHERLANDS B.V.

发明人： Johannes Jacobus Matheus BASELMANS ,  Paulus Jacobus Maria VAN ADRICHEM ,  Egbert LENDERINK

IPC分类号： G03F7/20

摘要： A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.