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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US11561478B2
公开(公告)日：2023-01-24
申请号：US17419360
申请日：2019-12-12
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.
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公开(公告)号：US10908496B2
公开(公告)日：2021-02-02
申请号：US16093537
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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