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公开(公告)号：US12066758B2
公开(公告)日：2024-08-20
申请号：US17728608
申请日：2022-04-25
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/7085 , G03F7/70916 , G03F7/70983
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号：US12001149B2
公开(公告)日：2024-06-04
申请号：US17428897
申请日：2020-01-24
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof
CPC classification number: G03F7/70925 , G03F1/38 , G03F1/82 , H01L21/67028
Abstract: A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.
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公开(公告)号：US11003096B2
公开(公告)日：2021-05-11
申请号：US16719457
申请日：2019-12-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Timotheus Franciscus Sengers , Marcus Adrianus Van De Kerkhof , Mark Kroon , Kees Van Weert
Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.
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公开(公告)号：US10180629B2
公开(公告)日：2019-01-15
申请号：US15385584
申请日：2016-12-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Joeri Lof , Hans Butler , Sjoerd Nicolaas Lambertus Donders , Aleksey Yurievich Kolesnychenko , Erik Roelof Loopstra , Hendricus Johannes Maria Meijer , Johannes Catherinus Hubertus Mulkens , Roelof Aeilko Siebranc Ritsema , Frank Van Schaik , Timotheus Franciscus Sengers , Klaus Simon , Joannes Theodoor De Smit , Alexander Straaijer , Bob Streefkerk , Erik Theodorus Maria Bijlaart , Christian Alexander Hoogendam , Helmar Van Santen , Marcus Adrianus Van De Kerkhof , Mark Kroon , Arie Jeffrey Den Boef , Joost Jeroen Ottens , Jeroen Johannes Sophia Maria Mertens
IPC: G03F7/20
Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.
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公开(公告)号：US10025204B2
公开(公告)日：2018-07-17
申请号：US15428858
申请日：2017-02-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Timotheus Franciscus Sengers , Marcus Adrianus Van De Kerkhof , Mark Kroon , Kees Van Weert
Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.
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Patent Agency Ranking
公开(公告)号：US09715179B2
公开(公告)日：2017-07-25
申请号：US14933956
申请日：2015-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Siebe Landheer , Marcel Beckers , Jeroen Peter Johannes Bruijstens , Ivo Adam Johannes Thomas , Franciscus Johannes Joseph Janssen
CPC classification number: G03F7/70341 , G03B27/52
Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The projection system has a final element. The apparatus also includes a barrier member surrounding a space between the projection system and, in use, the substrate, to define in part with the final element a reservoir for liquid. The barrier member is spaced from the final element to define a gap therebetween. The apparatus further includes a deformable seal between a radially outer surface of the final element and a radially outer surface of the barrier member. The deformable seal is configured to substantially prevent a gas from flowing past the seal towards or away from the reservoir of liquid.
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公开(公告)号：US09436099B2
公开(公告)日：2016-09-06
申请号：US14273707
申请日：2014-05-09
Applicant: ASML Netherlands B.V.
Inventor： Christian Marinus Leewis , Hugo Augustinus Joseph Cramer , Marcus Adrianus Van De Kerkhof , Johannes Anna Quaedackers , Christine Corinne Mattheus
CPC classification number: G03F7/70641 , G03F1/38 , G03F7/706 , G03F7/70608 , G03F7/70625 , G03F7/70675 , G03F7/70683
Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.
Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构组成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。
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8.发明授权Lithographic apparatus and a method for determining a polarization property of a projection system using an adjustable polarizer and interferometric sensor 有权光刻设备和使用可调节偏振器和干涉测量传感器确定投影系统的偏振特性的方法公开(公告)号：US09170498B2
公开(公告)日：2015-10-27
申请号：US13786400
申请日：2013-03-05
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Wilhelmus Petrus De Boeij , Hendrikus Robertus Marie Van Greevenbroek , Michel François Hubert Klaassen , Martijn Gerard Dominique Wehrens , Haico Victor Kok , Wilhelmus Jacobus Maria Rooijakkers , Tammo Uitterdijk
IPC: G03F7/20
CPC classification number: G03F7/70133 , G03F7/70566 , G03F7/70591 , G03F7/7085
Abstract: A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.
Abstract translation: 光刻设备包括照明系统，构造成支撑图案形成装置的支撑，投影系统，干涉测量传感器和检测器。 干涉测量传感器被设计成测量由可调偏振器投射的投影系统投影的辐射束的一个或多个波前。 所述干涉测量传感器包括设置在所述光刻设备中的基底水平处的衍射元件和与所述衍射元件间隔开的检测器，所述衍射元件被布置成在剪切方向上相互移位的至少两个波前之间提供剪切干涉测量。 该检测器设计用于从波前测量中确定投影系统对偏振影响特性的信息。
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公开(公告)号：US11048180B2
公开(公告)日：2021-06-29
申请号：US16571956
申请日：2019-09-16
Applicant: ASML Netherlands B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Christian Gerardus Norbertus Hendricus Marie Cloin , Edwin Te Sligte , Marcus Adrianus Van De Kerkhof , Ferdinandus Martinus Jozef Henricus Van De Wetering
IPC: G03F7/20
Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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