公开(公告)号：US20200233311A1

公开(公告)日：2020-07-23

申请号：US16076231

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  Lam Research Corporation

Inventor： Michael KUBIS ,  Marinus JOCHEMSEN ,  Richard Stephen WISE ,  Nader SHAMMA ,  Girish Anant DIXIT ,  Liesbeth REIJNEN ,  Ekaterina Mikhailovna VIATKINA ,  Melisa LUCA ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20 ,  G01N21/47

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

公开(公告)号：US20210389683A1

公开(公告)日：2021-12-16

申请号：US17283307

申请日：2019-09-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Ekaterina Mikhailovna VIATKINA ,  Tom VAN HEMERT

IPC: G03F7/20 ,  G05B15/02

Abstract: A method for characterizing post-processing data in terms of individual contributions from processing stations, the post-processing data relating to a manufacturing process for manufacturing integrated circuits on a plurality of substrates using a corresponding processing apparatus for each of a plurality of process steps, at least some of the processing apparatuses each including a plurality of the processing stations, and wherein the combination of processing stations used to process each substrate defines a process thread for the substrate; the method including: obtaining post-processing data associated with processing of the plurality of substrates in a cyclic sequence of processing threads; and determining an individual contribution of a particular processing station by comparing a subset of the post-processing data corresponding to substrates having shared process sub-threads, wherein a process sub-thread describes the process steps of each process thread other than the process step to which the particular processing station corresponds.

公开(公告)号：US20220236647A1

公开(公告)日：2022-07-28

申请号：US17635290

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Cornelis Johannes Henricus LAMBREGTS ,  Amir Bin ISMAIL ,  Rizvi RAHMAN ,  Allwyn BOUSTHEEN ,  Raheleh PISHKARI ,  Everhardus Cornelis MOS ,  Ekaterina Mikhailovna VIATKINA ,  Roy WERKMAN ,  Ralph BRINKHOF

IPC: G03F7/20

Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.