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公开(公告)号：US20240377756A1
公开(公告)日：2024-11-14
申请号：US18749556
申请日：2024-06-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Yichen ZHANG , Sarathi ROY
Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
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公开(公告)号：US20210255547A1
公开(公告)日：2021-08-19
申请号：US16973395
申请日：2019-05-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jeroen Van Dongen , Wim Tjibbo TEL , Sarathi ROY , Yichen ZHANG , Andrea CAVALLI , Bart Laurens SJENITZER , Simon Philip Spencer HASTINGS
IPC: G03F7/20
Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
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公开(公告)号：US20210208511A1
公开(公告)日：2021-07-08
申请号：US16468304
申请日：2017-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hans Erik KATTOUW , Valerio ALTINI , Bearrach MOEST
Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.
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公开(公告)号：US20180181011A1
公开(公告)日：2018-06-28
申请号：US15736142
申请日：2016-06-02
Applicant: ASML Netherlands B.V.
Inventor： Bram VAN HOOF , Wim Tjibbo TEL
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70525 , G03F9/7026 , G03F9/7034 , G03F9/7092
Abstract: A lithographic apparatus obtains a height map of a substrate and uses the height map when controlling imaging of the pattern to the substrate. The apparatus is arranged to disregard at least partially height anomalies when controlling the imaging. The height anomalies may be identified by processing the height map. For example, in some embodiments the height anomalies are identified using a shape recognition model. In some embodiments, a modified version of the height map is produced in which the height anomalies are at least partially removed, and the modified version of the height map is used in controlling the imaging. An anomaly map may be used together with the (unmodified) height map to control imaging.
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公开(公告)号：US20170153558A1
公开(公告)日：2017-06-01
申请号：US15358321
申请日：2016-11-22
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo TEL , Frank STAALS
IPC: G03F9/00
CPC classification number: G03F7/70683 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F9/7026
Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.
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Patent Agency Ranking
6.发明申请Method of Determining Focus Corrections, Lithographic Processing Cell and Device Manufacturing Method 有权确定焦点校正的方法，光刻处理单元和器件制造方法公开(公告)号：US20150085267A1
公开(公告)日：2015-03-26
申请号：US14562133
申请日：2014-12-05
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70616 , G03F7/70625 , G03F9/7026
Abstract: A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.
Abstract translation: 一种用于确定光刻投影装置的聚焦校正的方法和相关联的装置。 该方法包括在测试基板上暴露多个全局校正场，每个全局校正场均包括多个全局校正标记，并且每个全局校正场在其上以倾斜的焦点偏移曝光; 测量所述多个全局校正标记中的每一个的聚焦依赖特性，以确定场间焦点变化信息; 以及从所述场间焦点变化信息计算场间焦点校正。
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公开(公告)号：US20240126181A1
公开(公告)日：2024-04-18
申请号：US18511454
申请日：2023-11-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham SLACHTER , Stefan HUNSCHE , Wim Tjibbo TEL , Anton Bernhard VAN OOSTEN , Koenraad VAN INGEN SCHENAU , Gijsbert RISPENS , Brennan PETERSON
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70558 , G03F7/70625
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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公开(公告)号：US20240111218A1
公开(公告)日：2024-04-04
申请号：US18387082
申请日：2023-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/70525 , G03F7/7065 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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公开(公告)号：US20240012337A1
公开(公告)日：2024-01-11
申请号：US18229984
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
CPC classification number: G03F7/70625 , G06T7/0004 , H01L22/20 , G06F30/20 , H01L21/00
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US20230035073A1
公开(公告)日：2023-02-02
申请号：US17783443
申请日：2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Adriaan Johan VAN LEEST
IPC: G03F7/20
Abstract: A method for determining a measurement recipe describing one or more measurement settings for measuring a parameter of interest from a substrate subject to an etch induced parameter error, the etch induced parameter error affecting measurement of the parameter of interest in a recipe dependent manner. The method include obtaining parameter of interest set-up data relating to measurements of at least one set-up substrate on which the parameter of interest has various first induced set values and etch induced parameter set-up data relating to measurements of at least one set-up substrate on which the etch induced parameter has various second induced set values. The recipe is determined so as to minimize the effect of the etch induced parameter on measurement of the parameter of interest.
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