公开(公告)号：US20190155173A1

公开(公告)日：2019-05-23

申请号：US16178638

申请日：2018-11-02

Applicant: ASML Netherlands B.V.

Inventor： Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard Mc Namara ,  Thomas Theeuwes ,  Maria Isabel De La Fuente Valentin ,  Mir Homayoun Shahrjerdy ,  Arie Jeffrey Den Boef ,  Shu-jin Wang

IPC: G03F7/20 ,  G06T7/00 ,  G06K9/46

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：US20220066330A1

公开(公告)日：2022-03-03

申请号：US17497087

申请日：2021-10-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Anagnostis TSIATMAS ,  Paul Christiaan Hinnen ,  Elliott Gerard Mc Namara ,  Thomas Theeuwes ,  Maria Isabel De La Fuente Valentin ,  Mir Homayoun Shahrjerdy ,  Arie Jeffrey Den Boef ,  Shu-jin Wang

IPC: G03F7/20 ,  G06T7/00 ,  G06K9/46

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：US20190064653A1

公开(公告)日：2019-02-28

申请号：US16100269

申请日：2018-08-10

Applicant: ASML Netherlands B.V.

Inventor： Koen Van Witteveen ,  Wei-Chun Wang ,  Paul Jonathan Turner ,  Elliott Gerard Mc Namara ,  Giacomo Miceli

IPC: G03F1/36 ,  G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：US10895811B2

公开(公告)日：2021-01-19

申请号：US16599215

申请日：2019-10-11

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Elliott Gerard Mc Namara ,  Pierre-Yves Jerome Yvan Guittet ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers

IPC: G03F7/20

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.