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公开(公告)号：US20220276564A1
公开(公告)日：2022-09-01
申请号：US17632632
申请日：2020-07-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Mir Farrokh SHAYEGAN SALEK , Rafael C. HOWELL , Yunan ZHENG , Haiqing WEI , Yu CAO
IPC: G03F7/20
Abstract: A method of simulating a pattern to be imaged onto a substrate using a photolithography system, the method includes obtaining a pattern to be imaged onto the substrate, smoothing the pattern, and simulating an image of the smoothed pattern. The smoothing may include application of a graphical low pass filter and the simulating may include application of edge filters from an edge filter library.
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