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公开(公告)号：US11366396B2
公开(公告)日：2022-06-21
申请号：US17268177
申请日：2019-08-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Daan Maurits Slotboom , Hermannes Theodorus Heijmerikx , Javier Augusto Loaiza Rivas , Jeroen Cottaar
IPC: G03F7/20
Abstract: A method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method includes determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.
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