公开(公告)号：US11366396B2

公开(公告)日：2022-06-21

申请号：US17268177

申请日：2019-08-01

申请人： ASML NETHERLANDS B.V.

发明人： Daan Maurits Slotboom ,  Hermannes Theodorus Heijmerikx ,  Javier Augusto Loaiza Rivas ,  Jeroen Cottaar

IPC分类号： G03F7/20

摘要： A method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method includes determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

公开(公告)号：US11137695B2

公开(公告)日：2021-10-05

申请号：US16339273

申请日：2017-09-08

申请人： ASML Netherlands B.V.

发明人： Arend Johannes Donkerbroek ,  Jeroen Cottaar ,  Thomas Theeuwes ,  Erik Johan Koop

IPC分类号： G03F9/00 ,  G03F7/20 ,  H01L21/027

摘要： Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

公开(公告)号：US10915033B2

公开(公告)日：2021-02-09

申请号：US15779758

申请日：2016-11-17

申请人： ASML NETHERLANDS B.V.

发明人： Bram Van Hoof ,  Jeroen Cottaar

IPC分类号： G03F9/00 ,  G03F7/20

摘要： Combination of a stage and a level sensor configured to sense a height level at a target location on an object is described, the stage comprising an object table configured to hold the object and a positioning device for displacing the object table relative to the level sensor in a first direction, the level sensor comprising a projection system configured to project a measurement beam onto a measurement area of the object, the measurement area having a measurement area length in the first direction, a detector system configured to receive different portions of the measurement beam after being reflected off different sub-areas within the measurement area, the different sub-areas being arranged in the first direction, and to supply output signals representative of the different portions received, a signal processing system configured to process the output signals from the detector system.

公开(公告)号：US11982946B2

公开(公告)日：2024-05-14

申请号：US17628668

申请日：2020-07-06

申请人： ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

发明人： Nikhil Mehta ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij ,  Hugo Augustinus Joseph Cramer ,  Olger Victor Zwier ,  Jeroen Cottaar ,  Patrick Warnaar

IPC分类号： G03F7/20 ,  G01N21/956 ,  G03F1/84 ,  G03F7/00

CPC分类号： G03F7/70625 ,  G01N21/956 ,  G03F1/84 ,  G03F7/70633

摘要： A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US12031909B2

公开(公告)日：2024-07-09

申请号：US18021885

申请日：2021-07-20

申请人： ASML Netherlands B.V.

发明人： Jeroen Cottaar

IPC分类号： G01N21/47 ,  G01N21/95

CPC分类号： G01N21/4738 ,  G01N21/9501

摘要： Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

公开(公告)号：US11809088B2

公开(公告)日：2023-11-07

申请号：US17636452

申请日：2020-07-22

申请人： ASML NETHERLANDS B.V.

发明人： Hadi Yagubizade ,  Min-Seok Kim ,  Yingchao Cui ,  Daan Maurits Slotboom ,  Jeonghyun Park ,  Jeroen Cottaar

IPC分类号： G03F7/20 ,  G03F7/00

CPC分类号： G03F7/70483

摘要： A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.