公开(公告)号：US20220011683A1

公开(公告)日：2022-01-13

申请号：US17294503

申请日：2019-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Pavel SMAL ,  Inez Marlena SOCHAL ,  Gautam SARMA

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining a layout of mark positions across a patterning device or substrate, the method including: obtaining a model configured to model data associated with measurements performed on the patterning device or substrate at one or more mark positions; obtaining an initial mark layout including initial mark positions; reducing the initial mark layout by removal of one or more mark positions to obtain a plurality of reduced mark layouts, each reduced mark layout obtained by removal of a different mark position from the initial mark layout; determining a model uncertainty metric associated with usage of the model for each reduced mark layout out of the plurality of reduced mark layouts; and selecting one or more reduced mark layouts based on its associated model uncertainty metric.