公开(公告)号：US20220252988A1

公开(公告)日：2022-08-11

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Simon Philip Spencer HASTINGS ,  Jeffrey Thomas ZIEBARTH ,  Samee Ur REHMAN ,  Davit HARUTYUNYAN ,  Chenxi LIN ,  Yana CHENG

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.