公开(公告)号：US11686997B2

公开(公告)日：2023-06-27

申请号：US17685988

申请日：2022-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US20220187701A1

公开(公告)日：2022-06-16

申请号：US17685988

申请日：2022-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US11971654B2

公开(公告)日：2024-04-30

申请号：US18208188

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US11287737B2

公开(公告)日：2022-03-29

申请号：US16761683

申请日：2018-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.