公开(公告)号：US20240369920A1

公开(公告)日：2024-11-07

申请号：US18774721

申请日：2024-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Sander Baltussen ,  Dennis De Graaf ,  Johannes Christiaan Leonardus Franken ,  Adrianus Johannes Maria Giesbers ,  Alexander Ludwig Klein ,  Johan Hendrik Klootwijk ,  Peter Simon Antonius Knapen ,  Evgenia Kurganova ,  Alexey Sergeevich Kuznetsov ,  Arnoud Willem Notenboom ,  Mahdiar Valefi ,  Marcus Adrianus Van De Kerkhof ,  Wilhelmus Theodorus Anthonius Johannes Van Den Einden ,  Ties Wouter Van Der Woord ,  Hendrikus Jan Wondergem ,  Aleksandar Nikolov Zdravkov

IPC: G03F1/64 ,  G03F7/00

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

公开(公告)号：US11686997B2

公开(公告)日：2023-06-27

申请号：US17685988

申请日：2022-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US20220187701A1

公开(公告)日：2022-06-16

申请号：US17685988

申请日：2022-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US11971654B2

公开(公告)日：2024-04-30

申请号：US18208188

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US11287737B2

公开(公告)日：2022-03-29

申请号：US16761683

申请日：2018-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol ,  Adrianus Johannes Maria Giesbers ,  Johan Hendrik Klootwijk ,  Evgenia Kurganova ,  Maxim Aleksandrovich Nasalevich ,  Arnoud Willem Notenboom ,  Mária Péter ,  Leonid Aizikovitsj Sjmaenok ,  Ties Wouter Van Der Woord ,  David Ferdinand Vles

IPC: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.