公开(公告)号：US10976196B2

公开(公告)日：2021-04-13

申请号：US16488259

申请日：2018-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Joost André Klugkist ,  Vadim Yevgenyevich Banine ,  Johan Franciscus Maria Beckers ,  Madhusudhanan Jambunathan ,  Maxim Aleksandrovich Nasalevich ,  Andrey Nikipelov ,  Roland Johannes Wilhelmus Stas ,  David Ferdinand Vles ,  Wilhelmus Jacobus Johannes Welters ,  Sandro Wricke

IPC: G01J1/42 ,  G03F7/20

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.