公开(公告)号：US20240094640A1

公开(公告)日：2024-03-21

申请号：US18276014

申请日：2022-01-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Thiago DOS SANTOS GUZELLA ,  Masashi ISHIBASHI ,  NoriaKi SANNO ,  Vahid BASTANI ,  Reza SAHRAEIAN ,  Putra SAPUTRA

IPC: G03F7/00 ,  G06F30/398

CPC classification number: G03F7/70625 ,  G03F7/70558 ,  G03F7/706839 ,  G06F30/398

Abstract: A method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method includes obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of the one or more structures being a measure of yield and the second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of the one or more structures and correlates with the first metrology data; and using the model to obtain the spatially varying process offset (MTD).