公开(公告)号：US20230144584A1

公开(公告)日：2023-05-11

申请号：US18091716

申请日：2022-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Feng CHEN ,  Wangshi ZHAO ,  Youping ZHANG

IPC: G06F30/398 ,  G03F1/36

CPC classification number: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.