公开(公告)号：US12242201B2

公开(公告)日：2025-03-04

申请号：US17276533

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Weixuan Hu ,  Fei Yan ,  Wei Peng ,  Vivek Kumar Jain

IPC: G03F7/00

Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.