-
公开(公告)号：US10514614B2
公开(公告)日：2019-12-24
申请号：US15546592
申请日：2016-01-20
Applicant: ASML Netherlands B.V.
Inventor： Venugopal Vellanki , Vivek Kumar Jain , Stefan Hunsche
Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
-
公开(公告)号：US11669020B2
公开(公告)日：2023-06-06
申请号：US17162017
申请日：2021-01-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
CPC classification number: G03F7/70641 , G03F7/705 , G03F7/7065 , G03F7/70508 , G03F7/70541 , G03F9/7026
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
-
Patent Agency Ranking
公开(公告)号：US10859926B2
公开(公告)日：2020-12-08
申请号：US15580515
申请日：2016-05-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan Hunsche , Rafael Aldana Laso , Vivek Kumar Jain , Marinus Jochemsen , Xinjian Zhou
Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.
-
公开(公告)号：US12242201B2
公开(公告)日：2025-03-04
申请号：US17276533
申请日：2019-09-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Youping Zhang , Weixuan Hu , Fei Yan , Wei Peng , Vivek Kumar Jain
IPC: G03F7/00
Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.
-
公开(公告)号：US11003093B2
公开(公告)日：2021-05-11
申请号：US16696263
申请日：2019-11-26
Applicant: ASML Netherlands B.V.
Inventor： Venugopal Vellanki , Vivek Kumar Jain , Stefan Hunsche
IPC: G06F30/398 , G06N20/00 , G03F7/00 , G03F1/60 , G03F1/84 , G06F30/20 , G03F7/20 , G06F119/18
Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
-
公开(公告)号：US12092965B2
公开(公告)日：2024-09-17
申请号：US17313135
申请日：2021-05-06
Applicant: ASML Netherlands B.V.
Inventor： Venugopal Vellanki , Vivek Kumar Jain , Stefan Hunsche
IPC: G06F30/20 , G03F1/60 , G03F1/84 , G03F7/00 , G06F30/398 , G06N20/00 , G06F119/18
CPC classification number: G03F7/7065 , G03F1/60 , G03F1/84 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F7/70666 , G06F30/398 , G06N20/00 , G06F30/20 , G06F2119/18
Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
-
公开(公告)号：US10908515B2
公开(公告)日：2021-02-02
申请号：US16468063
申请日：2017-11-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
-
-
-
-
-
-
Search Results
7
records
(took 0.016 seconds)
