公开(公告)号：US11809088B2

公开(公告)日：2023-11-07

申请号：US17636452

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Hadi Yagubizade ,  Min-Seok Kim ,  Yingchao Cui ,  Daan Maurits Slotboom ,  Jeonghyun Park ,  Jeroen Cottaar

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70483

Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.