公开(公告)号：US20230100578A1

公开(公告)日：2023-03-30

申请号：US17796751

申请日：2021-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Jun TAO ,  Quan ZHANG ,  Yongsheng SHU ,  Wei-chun FONG

IPC: G03F1/36 ,  G06N3/0464 ,  G03F7/20

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.