公开(公告)号：US10459345B2

公开(公告)日：2019-10-29

申请号：US15553106

申请日：2016-02-23

Applicant: ASML Netherlands B.V.

Inventor： Stefan Hunsche ,  Chiou-Hung Jang ,  Marinus Jochemsen ,  Vito Tomasello

IPC: G06F17/50 ,  G03F7/20

Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.