公开(公告)号：US11822255B2

公开(公告)日：2023-11-21

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US11681229B2

公开(公告)日：2023-06-20

申请号：US17214456

申请日：2021-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F7/7065 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70625 ,  G06F30/398 ,  H01L22/20 ,  H01L22/12

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US10712672B2

公开(公告)日：2020-07-14

申请号：US16315026

申请日：2017-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Jochemsen ,  Stefan Hunsche ,  Wim Tjibbo Tel

IPC: G03F7/20

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

公开(公告)号：US10514614B2

公开(公告)日：2019-12-24

申请号：US15546592

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F17/50 ,  G03F7/00 ,  G03F1/60 ,  G03F1/84 ,  G06N20/00 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US12271114B2

公开(公告)日：2025-04-08

申请号：US17441729

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson Middlebrooks ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij ,  Maxim Pisarenco ,  Stefan Hunsche

IPC: G03F7/00 ,  G06N3/08 ,  G06T7/00

Abstract: A method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set including (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a representation of a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function includes a relationship between the predicted substrate image and the metrology data.

公开(公告)号：US11003093B2

公开(公告)日：2021-05-11

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F30/398 ,  G06N20/00 ,  G03F7/00 ,  G03F1/60 ,  G03F1/84 ,  G06F30/20 ,  G03F7/20 ,  G06F119/18

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US10852646B2

公开(公告)日：2020-12-01

申请号：US16300314

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Jochemsen ,  Scott Anderson Middlebrooks ,  Stefan Hunsche ,  Te-Sheng Wang

IPC: G03F7/20

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

公开(公告)号：US10437157B2

公开(公告)日：2019-10-08

申请号：US15533309

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Markus Gerardus Martinus Maria Van Kraaij ,  Adrianus Cornelis Matheus Koopman ,  Stefan Hunsche ,  Willem Marie Julia Marcel Coene

IPC: G03B27/32 ,  G03F7/20 ,  G06T7/12 ,  G06T7/149 ,  G06T7/60

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

公开(公告)号：US20250053702A1

公开(公告)日：2025-02-13

申请号：US18928905

申请日：2024-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  G03F7/00 ,  H01L21/66

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

公开(公告)号：US12141507B2

公开(公告)日：2024-11-12

申请号：US17586856

申请日：2022-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  G03F7/00 ,  H01L21/66

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.