公开(公告)号：US20210405545A1

公开(公告)日：2021-12-30

申请号：US17471363

申请日：2021-09-10

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Willem Maria Julia Marcel Coene ,  Frank Arnoldus Johannes Maria Driessen ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G06N20/00 ,  G06F30/367 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

公开(公告)号：US11119414B2

公开(公告)日：2021-09-14

申请号：US16851477

申请日：2020-04-17

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Willem Maria Julia Marcel Coene ,  Frank Arnoldus Johannes Maria Driessen ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G06F15/18 ,  G03F7/20 ,  G06N20/00 ,  G06F30/367 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

公开(公告)号：US10509310B2

公开(公告)日：2019-12-17

申请号：US15561907

申请日：2016-03-08

Applicant: ASML Netherlands B.V.

Inventor： Frank Arnoldus Johannes Maria Driessen ,  Duan-Fu Stephen Hsu

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/34

Abstract: A patterning device carries a pattern of features to be transferred onto a substrate using a lithographic apparatus. The patterning device is free of light absorber material, at least in an area. The pattern of features in the area may include a dense array of lines, trenches, dots or holes. Individual lines, holes, etc. are defined in at least one direction by pairs of edges between regions of different phase in the patterning device. A distance between the pair of edges in the at least one direction is at least 15% smaller than a size of the individual feature to be formed on the substrate once adjusted by a magnification factor, if any, of the lithographic apparatus. The patterning device may be adapted for use in EUV lithography. The patterning device may be adapted for use in a negative tone resist and development process.