公开(公告)号：US20240142959A1

公开(公告)日：2024-05-02

申请号：US18407323

申请日：2024-01-08

Applicant: ASML Netherlands B.V.

Inventor： Jill Elizabeth FREEMAN ,  Vivek Kumar JAIN ,  Kuo-Feng PAO ,  Wim Tjibbo TEL

IPC: G05B19/418 ,  G03F1/44 ,  G03F7/00

CPC classification number: G05B19/41875 ,  G03F1/44 ,  G03F7/70508 ,  G05B19/41885 ,  G05B2219/45031

Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.