公开(公告)号：US20150338749A1

公开(公告)日：2015-11-26

申请号：US14410496

申请日：2013-06-03

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Shu-jin WANG ,  Christian Marinus LEEWIS ,  Kuo-Feng PAO

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以使用第一散射仪信号来选择用于确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

公开(公告)号：US20170153554A1

公开(公告)日：2017-06-01

申请号：US15429952

申请日：2017-02-10

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Shu-jin WANG ,  Christian Marinus LEEWIS ,  Kuo-Feng PAO

IPC: G03F7/20 ,  G03F1/42

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

公开(公告)号：US20240142959A1

公开(公告)日：2024-05-02

申请号：US18407323

申请日：2024-01-08

Applicant: ASML Netherlands B.V.

Inventor： Jill Elizabeth FREEMAN ,  Vivek Kumar JAIN ,  Kuo-Feng PAO ,  Wim Tjibbo TEL

IPC: G05B19/418 ,  G03F1/44 ,  G03F7/00

CPC classification number: G05B19/41875 ,  G03F1/44 ,  G03F7/70508 ,  G05B19/41885 ,  G05B2219/45031

Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.