公开(公告)号：US20230084130A1

公开(公告)日：2023-03-16

申请号：US17795058

申请日：2021-01-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Mhamed AKHSSAY ,  Pierluigi FRISCO

IPC: G03F7/20

Abstract: A method at tuning a lithographic process for a particular patterning device. The method includes: obtaining wavefront data relating to an objective lens of a lithographic apparatus, the wavefront data measured subsequent to an exposure of a pattern on a substrate using the particular patterning device; determining a pattern specific wavefront contribution from the wavefront data and a wavefront reference, the pattern specific wavefront contribution relating to the patterning device; and tuning the lithographic process for the particular patterning device using the pattern specific wavefront contribution.

公开(公告)号：US20220187715A1

公开(公告)日：2022-06-16

申请号：US17438314

申请日：2020-02-10

Applicant: ASML Netherlands B.V.

Inventor： Mhamed AKHSSAY ,  Laurentius Johannes Adrianus VAN BOKHOVEN

IPC: G03F7/20

Abstract: A method of predicting thermally induced aberrations of a projection system for projecting a radiation beam, the method comprising: calculating a change in temperature of the projection system from a power of the radiation beam output from the projection system using a dynamic linear function; and calculating the thermally induced aberrations from the calculated change in temperature using a static non-linear function.

公开(公告)号：US20210033979A1

公开(公告)日：2021-02-04

申请号：US16969078

申请日：2019-01-28

Applicant: ASML Netherlands B.V.

Inventor： Martijn Cornelis SCHAAFSMA ,  Mhamed AKHSSAY ,  James Robert DOWNES

IPC: G03F7/20

Abstract: A method of calibrating a projection system heating model to predict an aberration in a projection system in a lithographic apparatus, the method comprising passing exposure radiation through a projection system to expose one or more exposure fields on a substrate provided on a substrate table, making measurements of the aberration in the projection system caused by the exposure radiation, wherein the time period between measurements is less than the time period that would be taken to expose all exposure fields on the substrate.