公开(公告)号：US20200088659A1

公开(公告)日：2020-03-19

申请号：US16574970

申请日：2019-09-18

Applicant: ASML Netherlands B.V.

Inventor： Long MA ,  Chih-Yu JEN ,  Zhonghua DONG ,  Peilei ZHANG ,  Wei FANG ,  Chuan LI

IPC: G01N23/2251 ,  H01J37/28

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.