公开(公告)号：US20220336523A1

公开(公告)日：2022-10-20

申请号：US17721640

申请日：2022-04-15

Applicant: AU OPTRONICS CORPORATION

Inventor： Chia-Ting HSIEH ,  Chien-Fu HUANG ,  Cheng-Nan YEH ,  Seok-Lyul LEE ,  Yung-Hsiang LAN ,  June-Woo LEE ,  Sung-Yu SU ,  Hsien-Chun WANG ,  Ya-Jung WANG ,  Hsin-Ying LIN ,  Yu-Chieh LIN ,  Yang-En WU

IPC: H01L27/15 ,  G09G3/32

Abstract: The present disclosure provides a semiconductor device, including a buffer layer, a first sub-chip and a second sub-chip, and a connecting element. The first sub-chip and the second sub-chip are separately arranged on the buffer layer. Each of the first sub-chip and the second sub-chip includes a first diffusion layer, an active layer, and a second diffusion layer. The first diffusion layer, the active layer, and the second diffusion layer are sequentially arranged on the buffer layer in a top-down approach. The first diffusion layer and the buffer layer are first-type epitaxial layers, and the second diffusion layer is a second-type epitaxial layer. The connecting element is configured to couple the second diffusion layer of the first sub-chip and the first diffusion layer of the second sub-chip.

公开(公告)号：US20220336425A1

公开(公告)日：2022-10-20

申请号：US17723856

申请日：2022-04-19

Applicant: AU OPTRONICS CORPORATION

Inventor： June-Woo LEE ,  Yang-En WU ,  Sung-Yu SU ,  Hsien-Chun WANG ,  Ya-Jung WANG ,  Chia-Ting HSIEH ,  Chien-Fu HUANG ,  Hsin-Ying LIN

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/62

Abstract: The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.