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公开(公告)号：US3630693A
公开(公告)日：1971-12-28
申请号：US3630693D
申请日：1970-04-06
Applicant: AVCO CORP
Inventor： MOODY JERRY W , REID FRANCIS J
CPC classification number: C30B19/062 , G01J5/28 , Y10T428/12528 , Y10T428/12681
Abstract: Infrared detector material is formed by the epitaxial growth of a single crystal alloy of the two III-V compounds InAs and InSb on an InAs substrate. In the method of such growth, a liquid solution is prepared with excess indium solvent, InSb, and sufficient InAs to saturate the indium at 500* C. The InAs substrate, oriented in the III direction is immersed in the solution, and the substrate and the solution are brought to equilibrium at approximately 500* C. Slowly lowering the solution temperature causes a single crystal to be epitaxially grown on the substrate as a solid homogeneous InAs-InSb solution. Composition of the crystal is a function of solution composition and may be controlled by dissolving selected quantities of InSb in the solution.
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2.发明授权
公开(公告)号：US3558373A
公开(公告)日：1971-01-26
申请号：US3558373D
申请日：1968-06-05
Applicant: AVCO CORP
Inventor： MOODY JERRY W , REID FRANCIS J
CPC classification number: C30B19/062 , G01J5/28 , Y10S148/003 , Y10S148/065 , Y10S148/107 , Y10S420/903
Abstract: INFRARED DETECTOR MATERIAL IS FORMED BY THE EPITAXIAL GROWTH OF A SINGLE CRYSTAL ALLOY OF THE TWO III-V COMPOUNDS INAS AND INSB ON AN INAS SUBSTRATE. IN THE METHOD OF SUCH GROWTH , A LIQUID SOLUTION IS PREPARED WITH EXCESS INDIUM SOLVENT, INSB, AND SUFFICIENT INAS TO SATURATE THE INDIUM AT 500*C. THE INAS SUBSTRATE, ORIENTED IN THE (III) DIRECTION IS IMMERSED IN THE SOLUTION, AND THE SUBSTRATE AND THE SOLUTION ARE BROUGHT TO EQUILBRIUM AT APPROXIMATELY 500*C. SLOWLY LOWERING THE SOLUTION TEMPERATURE CAUSES A SINGLE CRYSTAL TO BE EPITAXIALLY GROWN ON THE SUBSTRATE AS A SOLID HOMOGENEOUS INAS-INSB SOLUTION. COMPOSITION OF THE CRYSTAL IS A FUNCTION OF SOLUTION COMPOSITION AND MAY BE CONTROLLED BY DISSOLVING SELECTED QUANTITIES OF INSB IN THE SOLUTION.
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