公开(公告)号：US20040129994A1

公开(公告)日：2004-07-08

申请号：US10697129

申请日：2003-10-29

申请人： Acrorad Co., Ltd.

发明人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

IPC分类号： H01L027/095

CPC分类号： H01L31/022408 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/118

摘要： Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate nullznull of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate nullynull of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

摘要翻译： 公开了一种肖特基势垒型半导体辐射检测元件，其特征在于，包括：以镉和碲为主要成分的化合物半导体晶体; 以及用于向化合物半导体晶体施加电压的电压施加装置。 根据本发明，所述电压施加装置包括在化合物半导体晶体的一个表面上形成的铟，镉和碲化合物：In x C y Te Tez。 优选地，化合物InxCdyTez中碲的占据率“z”在原子数之比不小于42.9％但不大于50％的范围内。 此外，化合物InxCdyTez中的镉的占有率优选为y以上，以原子数比计为0％以上10％以下的范围。