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公开(公告)号:US20100195684A1
公开(公告)日:2010-08-05
申请号:US12697857
申请日:2010-02-01
IPC分类号: H01S5/323 , H01L21/66 , H01L21/302 , H01L21/306
CPC分类号: H01L21/3063 , H01S5/0201 , H01S5/0203 , H01S5/021 , H01S5/32341
摘要: A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.
摘要翻译: 一种制造半导体激光器件的方法,通过使用光电化学(PEC)蚀刻的蚀刻刻面,使得所述刻面足够光滑以支持由该刻面限定的空腔内的光学模式。
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公开(公告)号:US08263500B2
公开(公告)日:2012-09-11
申请号:US12697857
申请日:2010-02-01
IPC分类号: H01L21/302 , H01L21/461
CPC分类号: H01L21/3063 , H01S5/0201 , H01S5/0203 , H01S5/021 , H01S5/32341
摘要: A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.
摘要翻译: 一种制造半导体激光器件的方法,通过使用光电化学(PEC)蚀刻的蚀刻刻面,使得所述刻面足够光滑以支持由该刻面限定的空腔内的光学模式。
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