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公开(公告)号:US20240250496A1
公开(公告)日:2024-07-25
申请号:US18402919
申请日:2024-01-03
发明人: Takehiko KIKUCHI
CPC分类号: H01S5/0207 , H01S5/0203 , H01S5/0218 , H01S5/3013 , H01S5/32316 , H01S5/3235
摘要: A method of manufacturing a semiconductor optical device is a method of manufacturing a semiconductor optical device including a chip containing a III-V compound semiconductor and a first substrate. The chip includes a second substrate and a semiconductor layer stacked on the second substrate. The method includes forming the chip by cutting the second substrate and the semiconductor layer, bonding the semiconductor layer of the chip to the first substrate, removing the second substrate by etching the chip bonded to the first substrate. A shape of the chip in plan view does not have a side perpendicular to a first direction. In the removing the second substrate, etching proceeds more easily in a second direction crossing the first direction than in the first direction.
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公开(公告)号:US11948980B1
公开(公告)日:2024-04-02
申请号:US17897765
申请日:2022-08-29
IPC分类号: H01L29/205 , H01L21/02 , H01L21/311 , H01L21/683 , H01L21/8252 , H01L23/00 , H01L27/06 , H01L27/088 , H01L27/12 , H01L27/15 , H01L29/66 , H01L33/00 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/227 , H01S5/343 , H01L27/085 , H01L29/423
CPC分类号: H01L29/205 , H01L21/02458 , H01L21/311 , H01L21/6835 , H01L21/8252 , H01L24/00 , H01L27/0605 , H01L27/0629 , H01L27/0676 , H01L27/088 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/66136 , H01L29/66143 , H01L29/66318 , H01L29/66462 , H01L29/66916 , H01L33/0025 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0093 , H01L33/06 , H01L33/32 , H01S5/0203 , H01S5/0217 , H01S5/227 , H01S5/34333 , H01L27/085 , H01L29/4236
摘要: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.
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公开(公告)号:US20230402564A1
公开(公告)日:2023-12-14
申请号:US18248740
申请日:2021-10-28
CPC分类号: H01L33/007 , H01L33/22 , H01L33/24 , H01L33/0075 , H01S5/18361 , H01S5/0205 , H01S5/0203 , C30B25/04 , C30B29/403 , H01L33/0093 , H01L2933/0083 , H01S2304/00
摘要: Light emitting devices having light extraction or guiding structures integrated in their epitaxial layers, wherein the light extraction and guiding structures are fabricated using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.
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公开(公告)号:US11817677B2
公开(公告)日:2023-11-14
申请号:US17839172
申请日:2022-06-13
发明人: Takuya Matsumoto , Barry C. Stipe
IPC分类号: H01S5/04 , G11B13/04 , H01S5/183 , H01S5/42 , G11B13/08 , G11B5/48 , H01S5/042 , H01S5/0233 , H01S5/0237 , H01S5/02 , G11B5/00
CPC分类号: H01S5/18394 , G11B5/4826 , G11B5/4866 , G11B13/08 , H01S5/0203 , H01S5/0233 , H01S5/0237 , H01S5/04256 , H01S5/04257 , H01S5/423 , G11B2005/0021 , H01S5/183
摘要: Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser (VCSEL), a head gimbal assembly for mounting a VCSEL, devices incorporating such articles, and to a process for forming a VCSEL. In an embodiment, a VCSEL device provided. The VCSEL device includes a chip for mounting on a slider, the chip having a plurality of surfaces and a notch, the plurality of surfaces comprising: a bottom surface for facing the slider; a top surface opposite the bottom surface; and a plurality of side surfaces, wherein the notch forms a recessed edge spaced away from the bottom surface and toward the top surface, the notch having a shoulder, a side, and an angle (θ1) between the shoulder and the side. The VCSEL device further includes two laser diode electrodes positioned in any combination on one or more of the plurality of surfaces of the chip.
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公开(公告)号:US20230246421A1
公开(公告)日:2023-08-03
申请号:US18174250
申请日:2023-02-24
IPC分类号: H01S5/223 , H01L21/67 , H01S5/028 , H01L21/3105 , H01L21/68 , H01S5/22 , H01S5/10 , H01S5/024 , H01S5/042 , C23C14/30 , H01S5/00 , H01S5/02 , H01S5/343
CPC分类号: H01S5/2231 , H01L21/67098 , H01S5/0282 , H01L21/31051 , H01L21/68 , H01S5/2202 , H01S5/2213 , H01S5/1014 , H01S5/2214 , H01S5/02461 , H01S5/0425 , C23C14/30 , H01S5/0021 , H01S5/0202 , H01S5/0203 , H01S5/343 , H01S2301/176 , H01S5/04254
摘要: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.
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公开(公告)号:US11688993B2
公开(公告)日:2023-06-27
申请号:US16628050
申请日:2018-07-26
发明人: John Brückner , Sven Gerhard
CPC分类号: H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/22
摘要: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.
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公开(公告)号:US20230178611A1
公开(公告)日:2023-06-08
申请号:US18071877
申请日:2022-11-30
IPC分类号: H01L29/205 , H01L29/66 , H01L27/06 , H01L27/12 , H01L21/311 , H01L33/00 , H01L21/02 , H01L21/683 , H01L33/06 , H01L27/15 , H01L21/8252 , H01S5/343 , H01S5/227 , H01S5/02 , H01L33/32 , H01L23/00 , H01L27/088
CPC分类号: H01L29/205 , H01L29/66143 , H01L29/66462 , H01L27/0605 , H01L27/1255 , H01L27/0629 , H01L21/311 , H01L33/007 , H01L21/02458 , H01L29/66136 , H01L21/6835 , H01L33/06 , H01L27/15 , H01L27/0676 , H01L33/0075 , H01L21/8252 , H01L33/0025 , H01S5/34333 , H01S5/227 , H01L33/0066 , H01S5/0217 , H01L33/32 , H01L24/00 , H01S5/0203 , H01L33/0093 , H01L27/1259 , H01L27/088 , H01L29/66318 , H01L29/66916 , H01L2224/95 , H01L29/7786
摘要: Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.
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公开(公告)号:US11664643B1
公开(公告)日:2023-05-30
申请号:US17546799
申请日:2021-12-09
发明人: James W. Raring , Hua Huang
IPC分类号: H01S5/02345 , H01S5/343 , H01S5/30 , H01S5/02 , H01S5/22 , H01S5/323 , H01S5/32 , H01S5/0234 , H01S5/02375 , H01S5/00 , H01S5/10
CPC分类号: H01S5/34333 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0234 , H01S5/02345 , H01S5/02375 , H01S5/1082 , H01S5/22 , H01S5/3013 , H01S5/3202 , H01S5/320275 , H01S5/32341 , H01L2224/48091 , H01L2224/48465 , H01S5/0042 , H01S5/32025
摘要: Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.
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公开(公告)号:US10038298B2
公开(公告)日:2018-07-31
申请号:US15829151
申请日:2017-12-01
IPC分类号: H01S5/00 , H01S5/20 , H01S5/22 , H01S5/02 , H01S5/10 , H01S5/343 , H01S5/12 , H01S5/223 , G01R31/26 , H01S5/028
CPC分类号: H01S5/0014 , G01R31/26 , G01R31/2635 , H01S5/0042 , H01S5/0201 , H01S5/0203 , H01S5/028 , H01S5/0287 , H01S5/1014 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/34306 , H01S5/34313 , H01S5/34333
摘要: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
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公开(公告)号:US20180159302A1
公开(公告)日:2018-06-07
申请号:US15820160
申请日:2017-11-21
发明人: Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , James W. Raring , Paul Rudy , Vlad Novotny
CPC分类号: H01S5/4093 , H01L24/83 , H01L24/95 , H01L33/0045 , H01L33/0075 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/16152 , H01S5/0203 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/2201 , H01S5/32341 , H01S5/4025 , H01L2924/00 , H01L2224/45099
摘要: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
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