METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE

    公开(公告)号:US20240250496A1

    公开(公告)日:2024-07-25

    申请号:US18402919

    申请日:2024-01-03

    发明人: Takehiko KIKUCHI

    IPC分类号: H01S5/02 H01S5/30 H01S5/323

    摘要: A method of manufacturing a semiconductor optical device is a method of manufacturing a semiconductor optical device including a chip containing a III-V compound semiconductor and a first substrate. The chip includes a second substrate and a semiconductor layer stacked on the second substrate. The method includes forming the chip by cutting the second substrate and the semiconductor layer, bonding the semiconductor layer of the chip to the first substrate, removing the second substrate by etching the chip bonded to the first substrate. A shape of the chip in plan view does not have a side perpendicular to a first direction. In the removing the second substrate, etching proceeds more easily in a second direction crossing the first direction than in the first direction.

    Method of producing a plurality of laser diodes and laser diode

    公开(公告)号:US11688993B2

    公开(公告)日:2023-06-27

    申请号:US16628050

    申请日:2018-07-26

    IPC分类号: H01S5/02 H01S5/22

    摘要: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.