专利检索 ap:("Aditi Banerjee" OR "Rick L. Wise" OR "Darius L. Crenshaw") AND inv:"Aditi Banerjee" 第 1 页

1.

发明授权
Capacitor and memory structure and method 失效

公开(公告)号：US06699745B1

公开(公告)日：2004-03-02

申请号：US09049591

申请日：1998-03-27

申请人： Aditi Banerjee , Rick L. Wise , Darius L. Crenshaw

发明人： Aditi Banerjee , Rick L. Wise , Darius L. Crenshaw

IPC分类号： H01L218234

CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964

摘要： A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.