公开(公告)号：US5581096A

公开(公告)日：1996-12-03

申请号：US343409

申请日：1994-11-22

申请人： Adolf Kugelmann ,  Vinko Marolt ,  Uwe Guenther ,  Oliver Schatz

发明人： Adolf Kugelmann ,  Vinko Marolt ,  Uwe Guenther ,  Oliver Schatz

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7436

摘要： An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inner transistor to be biased into conduction. Furthermore, a current flow takes place via the outer npn-transistors and the inner npn-transistor. The integrated semiconductor device having a thyristor minimizes interference produced in neighboring components.

摘要翻译： 具有晶闸管的集成半导体器件包括外部npn晶体管，外部pnp晶体管和内部npn晶体管。 外部pnp晶体管和内部npn晶体管互连以形成晶闸管，以允许内部晶体管被偏置成导通。 此外，电流通过外部npn晶体管和内部npn晶体管发生。 具有晶闸管的集成半导体器件使在相邻部件中产生的干扰最小化。

公开(公告)号：US20080211571A1

公开(公告)日：2008-09-04

申请号：US11631657

申请日：2005-05-31

申请人： Vinko Marolt ,  Ralf-Eckhard Stephan

发明人： Vinko Marolt ,  Ralf-Eckhard Stephan

IPC分类号： G05F1/10

CPC分类号： H01L27/0207 ,  H01L27/11807 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a device for passive stabilization of voltage supplies of a semiconductor element, regions made of a second conductivity type are embedded in a first layer of a first conductivity type within lateral regions, which are used for the wiring of standard cells of components. Barrier layers whose capacitances are used for supporting supply voltages are formed on the boundary surfaces. For this purpose, the regions of the second conductivity type are connected either to first substrate of the same conductivity type or to troughs within standard cells, which have the second conductivity type.

摘要翻译： 在用于半导体元件的电压供给的被动稳定的装置中，由第二导电类型制成的区域被嵌入在横向区域内的第一导电类型的第一层中，所述第一层用于组件的标准单元的布线。 在边界面上形成有电容用于支持电源电压的阻挡层。 为此，第二导电类型的区域连接到具有相同导电类型的第一衬底或具有第二导电类型的标准单元内的槽。