公开(公告)号：US20250098184A1

公开(公告)日：2025-03-20

申请号：US18470582

申请日：2023-09-20

Applicant: Advanced Micro Devices, Inc. ,  ATI Technologies ULC

Inventor： Arsalan Alam ,  Anadi Srivastava ,  Rajen Singh Sidhu ,  Alexander Helmut Pfeiffenberger ,  Liwei Wang

IPC: H01L23/522 ,  H01L23/64

Abstract: A method for increasing capacitance density within an integrated passive device can include forming a first trench capacitor within a substrate, forming a second trench capacitor within an insulating layer overlying the substrate, and connecting the first and second trench capacitors through connection vias that extend through the insulating layer to form an integrated passive device (IPD) capacitor. A high capacitance density device can include a stacked and co-integrated architecture of two or more tiers of trench capacitors.

公开(公告)号：US20250112047A1

公开(公告)日：2025-04-03

申请号：US18478746

申请日：2023-09-29

Applicant: Advanced Micro Devices, Inc.

Inventor： Chandra Sekhar Mandalapu ,  Raja Swaminathan ,  Liwei Wang ,  John Wuu

IPC: H01L21/20 ,  H01L21/683 ,  H01L23/00

Abstract: A hybrid bonding method includes fabricating plural semiconductor devices in a region of a bottom wafer adjacent to a front surface thereof, fusion bonding the front surface to a carrier substrate, thinning the bottom wafer opposite to the front surface to expose conductive regions of the semiconductor devices, forming a dielectric layer over a backside of the semiconductor devices, forming openings in the dielectric layer to expose the conductive regions, forming metal pads within the openings, dicing the bottom wafer and the carrier substrate to singulate the plural semiconductor devices, bonding the dielectric layer overlying the backside of the semiconductor devices to a dielectric layer overlying a front surface of a top wafer, bonding the metal pads within the openings in the dielectric layer to metal pads overlying the front surface of the top wafer, and removing the carrier substrate from the front surface of the bottom wafer.

公开(公告)号：US20250096161A1

公开(公告)日：2025-03-20

申请号：US18470559

申请日：2023-09-20

Applicant: Advanced Micro Devices, Inc. ,  ATI Technologies ULC

Inventor： Arsalan Alam ,  Anadi Srivastava ,  Rajen Singh Sidhu ,  Alexander Helmut Pfeiffenberger ,  Liwei Wang

IPC: H01L23/64 ,  H01L23/522

Abstract: A method for increasing capacitance density within an integrated passive device can include forming a first trench capacitor within a first insulating layer overlying a substrate, forming a second trench capacitor within a second insulating layer overlying the first insulating layer, and connecting the first and second trench capacitors through connection vias that extend through the second insulating layer to form an integrated passive device (IPD) capacitor. A high capacitance density device can include a stacked and co-integrated architecture of two or more such layers.