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公开(公告)号:US20230374689A1
公开(公告)日:2023-11-23
申请号:US17747981
申请日:2022-05-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chia Chun HSU , Chin-Feng WANG
CPC classification number: C25D5/18 , C25D7/12 , C25D5/007 , C25D5/08 , H01L21/561
Abstract: A method for manufacturing a package includes generating an electric field between an anode and a cathode in an electroplating solution to electroplate a substrate electrically connected to the cathode; depositing metal on a central region of the substrate with a first deposition rate; depositing metal on an outer region of the substrate with a second deposition rate lower than the first deposition rate; and reducing the first deposition rate.