公开(公告)号：US20230374689A1

公开(公告)日：2023-11-23

申请号：US17747981

申请日：2022-05-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chia Chun HSU ,  Chin-Feng WANG

IPC: C25D5/18 ,  C25D7/12 ,  C25D5/00 ,  C25D5/08

CPC classification number: C25D5/18 ,  C25D7/12 ,  C25D5/007 ,  C25D5/08 ,  H01L21/561

Abstract: A method for manufacturing a package includes generating an electric field between an anode and a cathode in an electroplating solution to electroplate a substrate electrically connected to the cathode; depositing metal on a central region of the substrate with a first deposition rate; depositing metal on an outer region of the substrate with a second deposition rate lower than the first deposition rate; and reducing the first deposition rate.